Individual device active cooling for enhanced system-level power density and more uniform temperature distribution

Zeng, Y. and Hussein, A. and Castellazzi, A. (2018) Individual device active cooling for enhanced system-level power density and more uniform temperature distribution. In: 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 13-17 May 2018, Chicago, USA.

[img]
Preview
PDF - Requires a PDF viewer such as GSview, Xpdf or Adobe Acrobat Reader
Download (794kB) | Preview

Abstract

This paper provides a method of individual device active cooling system to balance the temperature distribution of system-level power density. 3L-ANPC GaN inverter was used to test and prove the feasibility of it in using multi-level systems.

Item Type: Conference or Workshop Item (Paper)
Additional Information: Published in: Proceedings of 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD), Chicago, USA, 13-17 May 2018, p. 471-474. ISBN 9781538629277. © 2018 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
Keywords: Individual active cooling system, GaN HEMT, 3LANPC inverter
Schools/Departments: University of Nottingham, UK > Faculty of Engineering > Department of Electrical and Electronic Engineering
Identification Number: https://doi.org/10.1109/ispsd.2018.8393705
Depositing User: Eprints, Support
Date Deposited: 11 Sep 2018 08:46
Last Modified: 11 Sep 2018 08:48
URI: http://eprints.nottingham.ac.uk/id/eprint/54142

Actions (Archive Staff Only)

Edit View Edit View