Dynamic performance analysis of a 3.3 kV SiC MOSFET half-bridge module with parallel chips and body-diode freewheeling

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Hussein, Abdallah, Mouawad, Bassem and Castellazzi, Alberto (2018) Dynamic performance analysis of a 3.3 kV SiC MOSFET half-bridge module with parallel chips and body-diode freewheeling. In: 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 13-17 May 2018, Chicago, USA.

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Abstract

Recently, 3.3 and 6.5 kV power MOSFETs have been introduced. Based on the 3.3 kV device, a 100 A half-bridge power module has been developed, using parallel chips for current scaling and relying exclusively on the use of the transistors body-diode for current free-wheeling (i.e., no antiparallel external diode chips are used). This paper presents a thorough parametric characterization of the module switching performance. Single-chip and parallel-chip operation are investigated in both double-pulsea type tests and realistic singlephase inverter operation.

Item Type: Conference or Workshop Item (Paper)
Additional Information: Published in: Proceedings of 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD), Chicago, USA, 13-17 May 2018, p. 463-466. ISBN 9781538629277. doi:10.1109/ispsd.2018.8393703. © 2018 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
Keywords: Silicon carbide; SiC MOSFETs; power modules; inverter.
Schools/Departments: University of Nottingham, UK > Faculty of Engineering > Department of Electrical and Electronic Engineering
Identification Number: 10.1109/ispsd.2018.8393703
Depositing User: Eprints, Support
Date Deposited: 11 Sep 2018 08:32
Last Modified: 11 Sep 2018 08:42
URI: https://eprints.nottingham.ac.uk/id/eprint/54139

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