Van der Waals epitaxy of two-dimensional single-layer h-BN on graphite by molecular beam epitaxy: electronic properties and band structure

Pierucci, Debora and Zribi, Jihene and Henck, Hugo and Chaste, Julien and Silly, Mathieu G. and Bertran, François and Le Fevre, Patrick and Gil, Bernard and Summerfield, Alex and Beton, Peter H. and Novikov, Sergei V. and Cassabois, Guillaume and Rault, Julien E. and Ouerghi, Abdelkarim (2018) Van der Waals epitaxy of two-dimensional single-layer h-BN on graphite by molecular beam epitaxy: electronic properties and band structure. Applied Physics Letters, 112 (25). p. 253102. ISSN 0003-6951

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Abstract

We report on the controlled growth of h-BN/graphite by means of molecular beam epitaxy. X-Ray photoelectron spectroscopy suggests the presence of an interface without any reaction or intermixing, while the angle resolved photoemission spectroscopy (ARPES) measurements show that the h-BN layers are epitaxially aligned with graphite. A well-defined band structure is revealed by ARPES measurements, reflecting the high quality of the h-BN films. The measured valence band maximum located at 2.8 eV below the Fermi level reveals the presence of undoped h-BN films (band gap 6 eV). These results demonstrate that, although only weak van der Waals interactionsare present between h-BN and graphite, a long range ordering of h-BN can be obtained even on polycrystalline graphite via van der Waals epitaxy, offering the prospect of large area, single layer h-BN.

Item Type: Article
Keywords: Hexagonal Boron Nitride ; Van der Waals heterostructure ; Angle Resolved Photoemission Spectroscopy ; Molecular Beam Epitaxy
Schools/Departments: University of Nottingham, UK > Faculty of Science > School of Physics and Astronomy
Identification Number: https://doi.org/10.1063/1.5029220
Depositing User: Summerfield, Alex
Date Deposited: 10 Jul 2018 10:01
Last Modified: 10 Jul 2018 10:15
URI: http://eprints.nottingham.ac.uk/id/eprint/52839

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