Van der Waals epitaxy of two-dimensional single-layer h-BN on graphite by molecular beam epitaxy: electronic properties and band structureTools Pierucci, Debora, Zribi, Jihene, Henck, Hugo, Chaste, Julien, Silly, Mathieu G., Bertran, François, Le Fevre, Patrick, Gil, Bernard, Summerfield, Alex, Beton, Peter H., Novikov, Sergei V., Cassabois, Guillaume, Rault, Julien E. and Ouerghi, Abdelkarim (2018) Van der Waals epitaxy of two-dimensional single-layer h-BN on graphite by molecular beam epitaxy: electronic properties and band structure. Applied Physics Letters, 112 (25). p. 253102. ISSN 0003-6951 This is the latest version of this item.
Official URL: https://aip.scitation.org/doi/10.1063/1.5029220
AbstractWe report on the controlled growth of h-BN/graphite by means of molecular beam epitaxy. X-Ray photoelectron spectroscopy suggests the presence of an interface without any reaction or intermixing, while the angle resolved photoemission spectroscopy (ARPES) measurements show that the h-BN layers are epitaxially aligned with graphite. A well-defined band structure is revealed by ARPES measurements, reflecting the high quality of the h-BN films. The measured valence band maximum located at 2.8 eV below the Fermi level reveals the presence of undoped h-BN films (band gap 6 eV). These results demonstrate that, although only weak van der Waals interactionsare present between h-BN and graphite, a long range ordering of h-BN can be obtained even on polycrystalline graphite via van der Waals epitaxy, offering the prospect of large area, single layer h-BN.
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