Gate-defined quantum confinement in InSe-based van der Waals heterostructures

Hamer, Matthew James, Tovari, Endre, Zhu, Mengjian, Thompson, Michael, Mayorov, Alexander, Prance, Jonathon, Lee, Yongjin, Haley, Richard P., Kudrynskyi, Zakhar R., Patanè, Amalia, Terry, Daniel, Kovalyuk, Zakhar D., Ensslin, Klaus, Kretinin, Andrey V., Geim, Andre and Gorbachev, R.V. (2018) Gate-defined quantum confinement in InSe-based van der Waals heterostructures. Nano Letters . ISSN 1530-6992

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Indium selenide, a post-transition metal chalcogenide, is a novel two-dimensional (2D) semiconductor with interesting electronic properties. Its tunable band gap and high electron mobility have already attracted considerable research interest. Here we demonstrate strong quantum confinement and manipulation of single electrons in devices made from few-layer crystals of InSe using electrostatic gating. We report on gate-controlled quantum dots in the Coulomb blockade regime as well as one-dimensional quantization in point contacts, revealing multiple plateaus. The work represents an important milestone in the development of quality devices based on 2D materials and makes InSe a prime candidate for relevant electronic and optoelectronic applications.

Item Type: Article
Additional Information: This document is the Accepted Manuscript version of a Published Work that appeared in final form in Nano Letters, copyright © 2018 American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see
Keywords: Two-Dimensional Materials, Quantum Dots, Quantum Point Contacts, Charge Quantization, Indium Selenide, Electronic Devices
Schools/Departments: University of Nottingham, UK > Faculty of Science > School of Physics and Astronomy
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Depositing User: Eprints, Support
Date Deposited: 16 May 2018 10:53
Last Modified: 04 May 2020 19:36

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