Comparison of thermal and reliability performance between a SiC MOSFET module with embedded decoupling capacitors and commercial Si IGBT power modules

Yang, Li and Agyakwa, Pearl and Corfield, Martin and Johnson, Mark and Harris, Anne and Packwood, Matthew and Paciura, Krzysztof (2018) Comparison of thermal and reliability performance between a SiC MOSFET module with embedded decoupling capacitors and commercial Si IGBT power modules. In: 10th International Conference on Integrated Power Electronics (CIPS 2018), 20-23 Mar 2018, Stuttgart, Germany.

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Abstract

This paper characterizes thermal and reliability performance of a SiC MOSFET power module with embedded decoupling capacitors and without anti-parallel diodes. Active and passive temperature cycling, supported by transient thermal impedance characterisation and scanning acoustic microscopy, are used to evaluate key degradation mechanisms. The forward voltage drop of the body diode is used as a thermo-sensitive electrical parameter to estimate the junction temperature and the thermal structure function is analysed to elucidate the degradation in the heat flow path inside the module. Comparisons are made with commercial Si IGBT power modules.

Item Type: Conference or Workshop Item (Paper)
Schools/Departments: University of Nottingham, UK > Faculty of Engineering > Department of Electrical and Electronic Engineering
Related URLs:
URLURL Type
https://www.vde-verlag.de/proceedings-de/454540034.htmlUNSPECIFIED
Depositing User: Eprints, Support
Date Deposited: 15 May 2018 14:38
Last Modified: 08 May 2020 09:15
URI: http://eprints.nottingham.ac.uk/id/eprint/51806

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