Room temperature uniaxial magnetic anisotropy induced by Fe-islands in the InSe semiconductor van der Waals crystal

Moro, Fabrizio and Bhuiyan, Mahabub A. and Kudrynskyi, Zakhar R. and Puttock, Robert and Kazakova, Olga and Makarovsky, Oleg and Fay, Michael and Parmenter, Christopher D.J. and Kovalyuk, Zakhar D. and Fielding, Alistair John and Kern, Michal and van Slageren, Joris and Patanè, Amalia (2018) Room temperature uniaxial magnetic anisotropy induced by Fe-islands in the InSe semiconductor van der Waals crystal. Advanced Science, 5 (7). 1800257/1-1800257/7. ISSN 2198-3844

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Abstract

The controlled manipulation of the spin and charge of electrons in a semiconductor has the potential to create new routes to digital electronics beyond Moore’s law, spintronics, and quantum detection and imaging for sensing applications. These technologies require a shift from traditional semiconducting and magnetic nanostructured materials. Here, a new material system is reported, which comprises the InSe semiconductor van der Waals crystal that embeds ferromagnetic Fe-islands. In contrast to many traditional semiconductors, the electronic properties of InSe are largely preserved after the incorporation of Fe. Also, this system exhibits ferromagnetic resonances and a large uniaxial magnetic anisotropy at room temperature, offering opportunities for the development of functional devices that integrate magnetic and semiconducting properties within the same material system.

Item Type: Article
Keywords: van der Waals semiconductor; InSe; Iron; Electron Spin Resonance (ESR); Magnetic anisotropy
Schools/Departments: University of Nottingham, UK > Faculty of Science > School of Physics and Astronomy
Identification Number: https://doi.org/10.1002/advs.201800257
Depositing User: Eprints, Support
Date Deposited: 27 Apr 2018 09:48
Last Modified: 24 Jul 2018 08:45
URI: http://eprints.nottingham.ac.uk/id/eprint/51442

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