Formation routes and structural details of the CaF1 layer on Si(111) from high-resolution noncontact atomic force microscopy data

Rahe, Philipp and Smith, Emily F. and Wollschläger, Joachim and Moriarty, Philip J. (2018) Formation routes and structural details of the CaF1 layer on Si(111) from high-resolution noncontact atomic force microscopy data. Physical Review B, 97 (12). p. 125418. ISSN 2469-9969

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Abstract

We investigate the CaF1/Si(111) interface using a combination of high-resolution scanning tunnelling and noncontact atomic force microscopy operated at cryogenic temperature as well as x-ray photoelectron spectroscopy. Submonolayer CaF1 films grown at substrate temperatures between 550 and 600 ◦C on Si(111) surfaces reveal the existence of two island types that are distinguished by their edge topology, nucleation position, measured height, and inner defect structure. Our data suggest a growth model where the two island types are the result of two reaction pathways during CaF1 interface formation. A key difference between these two pathways is identified to arise from the excess species during the growth process, which can be either fluorine or silicon. Structural details as a result of this difference are identified by means of high-resolution noncontact atomic force microscopy and add insights into the growth mode of this heteroepitaxial insulator-on-semiconductor system.

Item Type: Article
Schools/Departments: University of Nottingham, UK > Faculty of Science > School of Chemistry
University of Nottingham, UK > Faculty of Science > School of Physics and Astronomy
Identification Number: 10.1103/PhysRevB.97.125418
Depositing User: Eprints, Support
Date Deposited: 09 Apr 2018 09:35
Last Modified: 09 Apr 2018 09:35
URI: http://eprints.nottingham.ac.uk/id/eprint/51009

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