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Di Marino, Christina, Boroyevich, Dushan, Burgos, Rolando, Johnson, Christopher Mark and Lu, G.-Q. (2017) Design and development of a high-density, high-speed 10 kV SiC MOSFET module. In: 2017 19th European Conference on Power Electronics and Applications (EPE'17 ECCE Europe), 11-14 Sept 2017, Warsaw, Poland.

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Abstract

High-density packaging of fast-switching power semiconductors typically requires low parasitic inductance, high heat extraction, and high thermo-mechanical reliability. High-density packaging of high-voltage power semiconductors, such as 10 kV SiC MOSFETs, also requires low electric field concentration in order to prevent premature dielectric breakdown. Consequently, in addition to the usual electromagnetic, thermal, and mechanical analyses, the electric fields must also be evaluated. This is the first detailed report on the optimization of a high-voltage SiC MOSFET power module.

Item Type:	Conference or Workshop Item (Paper)
RIS ID:	https://nottingham-repository.worktribe.com/output/881778
Additional Information:	doi:10.23919/EPE17ECCEEurope.2017.8099109 ISBN:978907581527 © 2017 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
Keywords:	Silicon Carbide (SiC), Packaging, High power density systems, High voltage power converters, MOSFET
Schools/Departments:	University of Nottingham, UK > Faculty of Engineering > Department of Electrical and Electronic Engineering
Depositing User:	Burns, Rebecca
Date Deposited:	23 Jan 2018 13:37
Last Modified:	04 May 2020 19:05
URI:	https://eprints.nottingham.ac.uk/id/eprint/49286

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