Voltage- and light-controlled spin properties of a two-dimensional hole gas in p-type GaAs/AlAs resonant tunneling diodes

Galeti, H.V.A. and Galvao Gobato, Y. and Brasil, M.J.S.P. and Taylor, D. and Henini, M. (2018) Voltage- and light-controlled spin properties of a two-dimensional hole gas in p-type GaAs/AlAs resonant tunneling diodes. Journal of Electronic Materials, 47 (3). pp. 1780-1785. ISSN 1543-186X

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Abstract

We have investigated the spin properties of a two-dimensional hole gas (2DHG) formed at the contact layer of a p-type GaAs/AlAs resonant tunneling diode (RTD). We have measured the polarized-resolved photoluminescence of the RTD as a function of bias voltage, laser intensity and external magnetic field up to 15T. By tuning the voltage and the laser intensity, we are able to change the spin-splitting from the 2DHG from almost 0 meV to 5 meV and its polarization degree from − 40% to + 50% at 15T. These results are attributed to changes of the local electric field applied to the two-dimensional gas which affects the valence band and the hole Rashba spin–orbit effect.

Item Type: Article
Additional Information: This is a post-peer-review, pre-copyedit version of an article published in Journal of Electronic Materials. The final authenticated version is available online at: http://dx.doi.org/10.1007/s11664-018-6065-4
Keywords: Two-dimensional hole gas; Spintronics; Resonant tunnelling diodes; Photoluminescence
Schools/Departments: University of Nottingham, UK > Faculty of Science > School of Physics and Astronomy
Identification Number: 10.1007/s11664-018-6065-4
Depositing User: Henini, Mohamed
Date Deposited: 23 Jan 2018 08:26
Last Modified: 24 Feb 2018 19:22
URI: http://eprints.nottingham.ac.uk/id/eprint/49213

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