Impact of doping on the performance of p-type Be-doped Al0.29 Ga0.71As Schottky diodes

Henini, M. (2017) Impact of doping on the performance of p-type Be-doped Al0.29 Ga0.71As Schottky diodes. Modern Electronic Materials, 3 (2). pp. 66-71. ISSN 2452-1779

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Abstract

The effects of changing the acceptors concentration on the electrical characteristics of Au/Ti on Be-doped Al0.29Ga0.71As Schottky contact have been investigated in the temperature range of 100–400 K. Using three devices with three different doping levels, the barrier height (ΦB), ideality factor (n) and series resistance (RS) for each diode were evaluated using both thermionic emission (TE) theory and Cheung's method. Our experimental results showed that the sample with a moderate doping concentration of 3×1016 cm-3 has the best performance, including ideality factor of 1.25 and rectification ratio of 2.24×103 at room temperature. All samples showed an abnormal behavior of reducing ΦB and increasing n with increase of temperature. This behavior was attributed, in case of low concertation samples, to barrier inhomogeneity and was explained by assuming a Gaussian distribution of barrier heights at the interface. While for the heavily doped sample, such non-ideal manner was ascribed with tunneling through the field emission (FE) mechanism.

Item Type: Article
Keywords: Schottky barrier height; Doping concentration effect; Current–voltage characteristics; Cheung's equation; Gaussian distribution of barrier heights
Schools/Departments: University of Nottingham, UK > Faculty of Science > School of Physics and Astronomy
Identification Number: 10.1016/j.moem.2017.06.001
Depositing User: Henini, Mohamed
Date Deposited: 20 Nov 2017 08:55
Last Modified: 20 Nov 2017 22:10
URI: http://eprints.nottingham.ac.uk/id/eprint/48225

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