Detailed investigation of defect states in Erbium doped In2O3 thin films

Henini, M. (2018) Detailed investigation of defect states in Erbium doped In2O3 thin films. Materials Research Bulletin, 99 . pp. 211-218. ISSN 0025-5408

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Abstract

Erbium doped Indium Oxide (In2O3:Er) thin films (TFs) were synthesised by spin-on technique. Secondary Ion Mass Spectrometry confirmed that Er is incorporated into the In2O3 lattice and formed an In-O-Er layer. The current–voltage loop produced a lower loop current window of ∼3.6 × 10−4 A for In2O3:Er TF based devices. The Au/In2O3:Er/Si Schottky devices have lower ideality factor (∼6) and higher barrier height (∼0.63 eV) at 300 K than Au/In2O3/Si control samples. A blue shift in the main band-gap (∼50 nm) was calculated for In2O3:Er TFs from 10 K photoresponse. The Au/In2O3:Er/Si samples show higher photosensitivity in the temperature range 10 K–300 K and maximum (∼15 times) in the UV region at 10 K as compared to the Au/In2O3/Si devices. In addition, the Au/In2O3:Er/Si devices have better UV to visible cut-off ratio (∼3 times). Excellent temporal responses were recorded for Au/In2O3:Er/Si in the UV region as compared to Au/In2O3/Si.

Item Type: Article
Keywords: A. Electronic materials; A. Oxides; B. Chemical synthesis; D. Defects; D. Electrical properties
Schools/Departments: University of Nottingham, UK > Faculty of Science > School of Physics and Astronomy
Identification Number: 10.1016/j.materresbull.2017.11.020
Depositing User: Henini, Mohamed
Date Deposited: 20 Nov 2017 09:01
Last Modified: 20 Nov 2017 09:07
URI: http://eprints.nottingham.ac.uk/id/eprint/48224

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