Terahertz conductivity of the highly mismatched amorphous alloy, GaNBi

Vaisakh, C.P. and Foxon, C.T. and Novikov, Sergei V. and Kini, R.N. (2017) Terahertz conductivity of the highly mismatched amorphous alloy, GaNBi. Semiconductor Science and Technology, 32 (12). 125009/1-125009/6. ISSN 1361-6641

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Abstract

We report terahertz optical conductivity measurements of the highly mismatched alloy, GaNBi. We find that in these amorphous GaNBi epilayers grown using plasma assisted molecular beam epitaxy, the optical conductivity is enhanced in the samples grown at higher gallium beam equivalent pressure (BEP). The optical conductivity spectra in these pseudo-amorphous epilayers follow a Drude–Smith behaviour due to charge confinement effects. The direct current conductivity in the epilayers grown at the highest Ga BEP (3.1 × 10−7 Torr) show an increase of three orders of magnitude compared to the one grown at the lowest Ga BEP (2.0 × 10−7 Torr). Our measurements suggests a percolative transition from an insulating nature in the GaNBi epilayers grown at low Ga BEP to a highly conducting phase in the epilayers grown at high Ga BEP.

Item Type: Article
Additional Information: This is an author-created, un-copyedited version of an article accepted for publication in Semiconductor Science and Technology. The publisher is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at https://doi.org/10.1088/1361-6641/aa9288
Keywords: Dilute bismides; Terahertz spectroscopy; Percolation conductivity
Schools/Departments: University of Nottingham, UK > Faculty of Science > School of Physics and Astronomy
Identification Number: 10.1088/1361-6641/aa9288
Depositing User: Eprints, Support
Date Deposited: 07 Nov 2017 13:53
Last Modified: 16 Nov 2017 17:50
URI: http://eprints.nottingham.ac.uk/id/eprint/47933

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