Experimental study of the short-circuit performance for a 600V normally-off p-gate GaN HEMT

Oeder, Thorsten and Castellazzi, Alberto and Pfost, Martin (2017) Experimental study of the short-circuit performance for a 600V normally-off p-gate GaN HEMT. In: 29th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2017, 28 May-1 Jun 2017, Sapporo, Japan.

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Abstract

In this paper, the short-circuit robustness of a normally off GaN HEMT is investigated in relation to applied bias conditions and pulse duration. The results align with previous studies on normally-on devices in highlighting an electrical type of failure. Here, however, the relevance of the specific gate-drive circuit design and corresponding device operational condtions is demonstrated. A gate-bias dependence (GBD) of the failure, correlated to the applied drain-source voltage, is introduced as a novel specific feature for the p-Gate type device.

Item Type: Conference or Workshop Item (Paper)
Additional Information: Published in: 2017 (IEEE) International Conference on Power Semiconductor Devices and ICs (ISPSD) IEEE, 2007. issn: 1063-6854, pp. 211-214, doi: 10.23919/ISPSD.2017.7988925
Keywords: Short-Circuit, GaN, HEMT, Normally-Off, p-Gate, Gate-Bias Dependence
Schools/Departments: University of Nottingham, UK > Faculty of Engineering > Department of Electrical and Electronic Engineering
Related URLs:
Depositing User: Burns, Rebecca
Date Deposited: 26 Oct 2017 12:15
Last Modified: 26 Oct 2017 12:35
URI: http://eprints.nottingham.ac.uk/id/eprint/47539

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