Design challenges in the use of silicon carbide JFETs in matrix converter applications

Empringham, Lee, De Lillo, Liliana and Shulz, Martin (2013) Design challenges in the use of silicon carbide JFETs in matrix converter applications. IEEE Transactions on Power Electronics, 29 (5). pp. 2563-2573. ISSN 0885-8993

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This paper investigates some of the challenges en¬countered during the implementation of a Silicon Carbide JFET matrix converter which has been designed to meet a specific power density of 20kW/litre with forced air cooling. After a brief introduction to the main features of the hardware implementation of the power converter, an insight into the control strategy and controller platform adopted is given with a particular attention to the issues relating to the high switching frequencies on the controller requirements and the performance implications of the gate drive circuitry. An analysis of the results which show the effects of gate driver and controller induced commutation time limitations on the output waveform quality is presented. Wide bandgap semiconductor devices offer the power electronic engineer new opportunities for high speed, high efficiency designs but these devices cannot be used as a simple like for like replacements and as such the whole converter system needs to be looked at.

Item Type: Article
Additional Information: (c)2013 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works
Keywords: AC - AC power conversion; Digital Control
Schools/Departments: University of Nottingham, UK > Faculty of Engineering > Department of Electrical and Electronic Engineering
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Depositing User: Burns, Rebecca
Date Deposited: 13 Sep 2017 12:02
Last Modified: 04 May 2020 16:39

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