Built-in reliability design of a high-frequency SiC MOSFET power module

Li, Jianfeng and Gurpinar, Emre and Lopez Arevalo, Saul and Castellazzi, Alberto and Mills, Liam (2014) Built-in reliability design of a high-frequency SiC MOSFET power module. In: 7th International Power Electronics Conference (IPEC Hiroshima 2014 ECCE- ASIA), 18-21 May 2014, Hiroshima, Japan.

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Abstract

A high frequency SiC MOSFET-based three-phase, 2-level power module has been designed, simulated, assembled and tested. The design followed a built-in reliability approach, involving extensive finite-element simulation based analysis of the electro-thermo-mechanical strain and stress affecting the switch during both manufacturing and operation: structural simulations were carried out to identify the materials, geometry and sizes of constituent parts which would maximize reliability. Following hardware development, functional tests were carried out, showing that the module is suitable for high switching frequency operation without impairing efficiency, thus enabling a considerable reduction of system-level size and weight.

Item Type: Conference or Workshop Item (Paper)
Additional Information: Published in: Proceedings of 2014 International Power Electronics Conference (IPEC Hiroshima 2014 - ECCE-ASIA). IEEE, 2014. ISBN 9781479927067. doi:10.1109/IPEC.2014.6870033 © 2014 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
Keywords: SiC MOSFET, multi-chip power modules, reliability.
Schools/Departments: University of Nottingham, UK > Faculty of Engineering > Department of Electrical and Electronic Engineering
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Depositing User: Burns, Rebecca
Date Deposited: 17 Jul 2017 09:43
Last Modified: 12 Oct 2017 23:42
URI: http://eprints.nottingham.ac.uk/id/eprint/44169

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