Antiferromagnetic CuMnAs multi-level memory cell with microelectronic compatibility

Olejnik, K. and Schuler, V. and Marti, X. and Novák, V. and Kaspar, Z. and Wadley, P. and Campion, R.P. and Edmonds, K.W. and Gallagher, B.L. and Garces, J. and Baumgartner, M. and Gambardella, P. and Jungwirth, T. (2017) Antiferromagnetic CuMnAs multi-level memory cell with microelectronic compatibility. Nature Communications, 8 . 15434/1-15434/7. ISSN 2041-1723

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Abstract

Antiferromagnets offer a unique combination of properties including the radiation and magnetic field hardness, the absence of stray magnetic fields, and the spin-dynamics frequency scale in terahertz. Recent experiments have demonstrated that relativistic spin-orbit torques can provide the means for an efficient electric control of antiferromagnetic moments. Here we show that elementary-shape memory cells fabricated from a single-layer antiferromagnet CuMnAs deposited on a III–V or Si substrate have deterministic multi-level switching characteristics. They allow for counting and recording thousands of input pulses and responding to pulses of lengths downscaled to hundreds of picoseconds. To demonstrate the compatibility with common microelectronic circuitry, we implemented the antiferromagnetic bit cell in a standard printed circuit board managed and powered at ambient conditions by a computer via a USB interface. Our results open a path towards specialized embedded memory-logic applications and ultra-fast components based on antiferromagnets.

Item Type: Article
Schools/Departments: University of Nottingham, UK > Faculty of Science > School of Physics and Astronomy
Identification Number: 10.1038/ncomms15434
Depositing User: Edmonds, Kevin
Date Deposited: 14 Jul 2017 12:35
Last Modified: 14 Jul 2017 12:35
URI: http://eprints.nottingham.ac.uk/id/eprint/44161

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