A comprehensive study on the avalanche breakdown robustness of silicon carbide power MOSFETs

Fayyaz, Asad and Romano, Gianpaolo and Urresti, Jesus and Riccio, Michele and Castellazzi, Alberto and Irace, Andrea and Wright, Nick (2017) A comprehensive study on the avalanche breakdown robustness of silicon carbide power MOSFETs. Energies, 10 (4). 452/1-452/15. ISSN 1996-1073

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Abstract

This paper presents an in-depth investigation into the avalanche breakdown robustness of commercial state-of-the-art silicon carbide (SiC) power MOSFETs comprising of functional as well as structural characterization and the corresponding underlying physical mechanisms responsible for device failure. One aspect of robustness for power MOSFETs is determined by its ability to withstand energy during avalanche breakdown. Avalanche energy (EAV) is an important figure of merit for all applications requiring load dumping and/or to benefit from snubber-less converter design. 2D TCAD electro-thermal simulations were performed to get important insight into the failure mechanism of SiC power MOSFETs during avalanche breakdown

Item Type: Article
Keywords: avalanche breakdown; silicon carbide (SiC); wide band-gap (WBG); power MOSFET; unclamped inductive switching (UIS); failure mechanism; leakage current
Schools/Departments: University of Nottingham, UK > Faculty of Engineering > Department of Electrical and Electronic Engineering
Identification Number: 10.3390/en10040452
Depositing User: Eprints, Support
Date Deposited: 12 Jul 2017 09:28
Last Modified: 14 Jul 2017 12:09
URI: http://eprints.nottingham.ac.uk/id/eprint/44109

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