3.3 kV SiC JBS diode configurable rectifier module

Mouawad, Bassem and Wang, Zhenyu and Buettner, J. and Castellazzi, Alberto (2017) 3.3 kV SiC JBS diode configurable rectifier module. In: EPE-ECCE 2017, 11-14 Sept 2017, Warsaw, Poland. (In Press)

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Abstract

This paper presents the use of innovative high-voltage SiC diode technology in the development of a user configurable full-wave or half-wave rectifier bridge. The devices are of merged Junction-Barrier-Schottky (JBS) type to enable for optimum performance even in the presence of current surges, as demanded by the application. To contain the cost of the proposed solution, their packaging relies on Insulated Metal Substrates (IMS), as opposed to conventional ceramic type substrates. The layout and module pin terminations are chosen to yield optimum electro-thermal and electro-magnetic performance in compatibility with a standard solder and wire-bond assembly process. Preliminary functional static characterization tests at different temper¬atures are also presented.

Item Type: Conference or Workshop Item (Paper)
Keywords: Wide bandgap devices, Silicon Carbide (SiC), Packaging, Diode, High voltage power converters, Wind energy
Schools/Departments: University of Nottingham, UK > Faculty of Engineering > Department of Electrical and Electronic Engineering
Related URLs:
Depositing User: Burns, Rebecca
Date Deposited: 10 Jul 2017 09:28
Last Modified: 12 Oct 2017 23:46
URI: http://eprints.nottingham.ac.uk/id/eprint/44033

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