Monte Carlo study on anomalous carrier diffusion in inhomogeneous semiconductors

Mori, N. and Hill, R.J.A. and Patanè, Amalia and Eaves, Laurence (2015) Monte Carlo study on anomalous carrier diffusion in inhomogeneous semiconductors. Journal of Physics: Conference Series, 647 . 012059/1-012059/4. ISSN 1742-6596

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Abstract

We perform ensemble Monte Carlo simulations of electron diffusion in high mobility inhomogeneous InAs layers. Electrons move ballistically for short times while moving diffusively for sufficiently long times. We find that electrons show anomalous diffusion in the intermediate time domain. Our study suggests that electrons in inhomogeneous InAs could be used to experimentally explore generalized random walk phenomena, which, some studies assert, also occur naturally in the motion of animal foraging paths.

Item Type: Article
Schools/Departments: University of Nottingham, UK > Faculty of Science > School of Physics and Astronomy
Identification Number: 10.1088/1742-6596/647/1/012059
Depositing User: Hill, Richard
Date Deposited: 21 Apr 2017 14:02
Last Modified: 13 Oct 2017 01:07
URI: http://eprints.nottingham.ac.uk/id/eprint/42083

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