Magnetic coupling in ferromagnetic semiconductor (Ga,Mn)As/(Al,Ga,Mn)As bilayers

Wang, M. and Wadley, P. and Campion, R.P. and Rushforth, A.W. and Edmonds, K.W. and Gallagher, B.L. and Charlton, T.R. and Kinane, C.J. and Langridge, S. (2015) Magnetic coupling in ferromagnetic semiconductor (Ga,Mn)As/(Al,Ga,Mn)As bilayers. Journal of Applied Physics, 118 (5). 053913/1-053913/5. ISSN 0021-8979

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We report on a study of ferromagnetic semiconductor (Ga,Mn)As/(Al,Ga,Mn)As bilayers using magnetometry and polarized neutron reflectivity (PNR). From depth-resolved characterization of the magnetic structure obtained by PNR, we concluded that the (Ga,Mn)As and (Al,Ga,Mn)As layers have in-plane and perpendicular-to-plane magnetic easy axes, respectively, with weak interlayer coupling. Therefore, the layer magnetizations align perpendicular to each other under low magnetic fields and parallel at high fields.

Item Type: Article
Schools/Departments: University of Nottingham, UK > Faculty of Science > School of Physics and Astronomy
Identification Number:
Depositing User: Rushforth, Andrew
Date Deposited: 19 Apr 2017 14:01
Last Modified: 04 May 2020 17:15

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