Magnetic coupling in ferromagnetic semiconductor (Ga,Mn)As/(Al,Ga,Mn)As bilayers

Wang, M., Wadley, P., Campion, R.P., Rushforth, A.W., Edmonds, K.W., Gallagher, B.L., Charlton, T.R., Kinane, C.J. and Langridge, S. (2015) Magnetic coupling in ferromagnetic semiconductor (Ga,Mn)As/(Al,Ga,Mn)As bilayers. Journal of Applied Physics, 118 (5). 053913/1-053913/5. ISSN 0021-8979

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We report on a study of ferromagnetic semiconductor (Ga,Mn)As/(Al,Ga,Mn)As bilayers using magnetometry and polarized neutron reflectivity (PNR). From depth-resolved characterization of the magnetic structure obtained by PNR, we concluded that the (Ga,Mn)As and (Al,Ga,Mn)As layers have in-plane and perpendicular-to-plane magnetic easy axes, respectively, with weak interlayer coupling. Therefore, the layer magnetizations align perpendicular to each other under low magnetic fields and parallel at high fields.

Item Type: Article
Schools/Departments: University of Nottingham, UK > Faculty of Science > School of Physics and Astronomy
Identification Number:
Depositing User: Rushforth, Andrew
Date Deposited: 19 Apr 2017 14:01
Last Modified: 04 May 2020 17:15

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