Deep ultraviolet emission in hexagonal boron nitride grown by high-temperature molecular beam epitaxy

Vuong, T.Q.P. and Cassabois, G. and Valvin, P. and Rousseau, E. and Summerfield, A. and Mellor, C.J. and Cho, Y. and Cheng, T.S. and Albar, J.D. and Eaves, Laurence and Foxon, C.T. and Beton, Peter H. and Novikov, Sergei V. and Gil, B. (2017) Deep ultraviolet emission in hexagonal boron nitride grown by high-temperature molecular beam epitaxy. 2D Materials, 4 (2). 021023/1-021023/7. ISSN 2053-1583

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Item Type: Article
RIS ID: https://nottingham-repository.worktribe.com/output/850832
Keywords: boron nitride, molecular beam epitaxy, deep ultraviolet
Schools/Departments: University of Nottingham, UK > Faculty of Science > School of Physics and Astronomy
Identification Number: https://doi.org/10.1088/2053-1583/aa604a
Depositing User: Eprints, Support
Date Deposited: 07 Apr 2017 14:23
Last Modified: 04 May 2020 18:37
URI: http://eprints.nottingham.ac.uk/id/eprint/41839

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