Spin polarization of carriers in InGaAs self-assembled quantum rings inserted in GaAs-AlGaAs resonant tunneling devices

Gordo, V. Orsi and Gobato, Y.G. and Galeti, H.V.A. and Brasil, M.J.S.P. and Taylor, David and Henini, M. (2017) Spin polarization of carriers in InGaAs self-assembled quantum rings inserted in GaAs-AlGaAs resonant tunneling devices. Journal of Electronic Materials, 46 (7). pp. 3851-3856. ISSN 1543-186X

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Abstract

In this work, we have investigated transport and polarization resolved photoluminescence (PL) of n-type GaAs-AlGaAs resonant tunneling diodes (RTDs) containing a layer of InGaAs self-assembled quantum rings (QRs) in the quantum well (QW). All measurements were performed under applied voltage, magnetic fields up to 15 T and using linearly polarized laser excitation. It was observed that the QRs’ PL intensity and the circular polarization degree (CPD) oscillate periodically with applied voltage under high magnetic fields at 2 K. Our results demonstrate an effective voltage control of the optical and spin properties of InGaAs QRs inserted into RTDs.

Item Type: Article
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Keywords: Quantum rings, photoluminescence, spin polarization, resonant tunneling
Schools/Departments: University of Nottingham, UK > Faculty of Science > School of Physics and Astronomy
Identification Number: 10.1007/s11664-017-5391-2
Depositing User: Henini, Mohamed
Date Deposited: 31 Mar 2017 09:53
Last Modified: 20 Nov 2017 03:41
URI: http://eprints.nottingham.ac.uk/id/eprint/41566

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