Impact of SiC technology in a three-port active bridge converter for energy storage integrated solid state transformer applicationsTools Wang, Zhenyi, Castellazzi, Alberto, Saeed, Sarah, Navarro-Rodríguez, Ángel and Garcia, Pablo (2016) Impact of SiC technology in a three-port active bridge converter for energy storage integrated solid state transformer applications. In: 4th IEEE Workshop on Wide Bandgap Power Devices and Applications (WiPDA 2016), 7-9 Nov 2016, Fayetteville, Arkansas, USA. Full text not available from this repository.
Official URL: http://ieeexplore.ieee.org/document/7799914/
AbstractSilicon Carbide (SiC) MOSFET power module has become commercially available in the past few years, and it is attractive in solid state transformers (SSTs) applications to replace Silicon (Si)-based IGBTs. This paper is focused on the efficiency comparison between a SiC MOSFET-based three-port active bridge converter (TAB) and a Si IGBT-based approach. The efficiency of the overall system, being one of its ports connected to the energy storage element (Lithium-Ion battery), is tested and analyzed. By swapping the switching frequency of the device, a significant efficiency improvement can be observed by SiC power devices. Experimental results indicated that an efficiency increment of around 2% can be brought by SiC MOSFET. Moreover, the battery losses can be reduced by a maximum of 8% with the increased switching frequency.
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