Integrated bi-directional SiC MOSFET power switches for efficient, power dense and reliable matrix converter assembly

Lasserre, Philippe and Lambert, Donatien and Castellazzi, Alberto (2016) Integrated bi-directional SiC MOSFET power switches for efficient, power dense and reliable matrix converter assembly. In: 4th IEEE Workshop on Wide Bandgap Power Devices and Applications (WiPDA 2016), 7-9 November 2016, Fayetteville, Arkansas, USA.

[img]
Preview
PDF - Requires a PDF viewer such as GSview, Xpdf or Adobe Acrobat Reader
Download (882kB) | Preview

Abstract

This paper presents an innovative device packaging and system integration approach aimed at optimizing the electro-thermal, electro-magnetic and thermo-mechanical performance of the switches in a power converter. In particular, the focus is on state-of-the-art commercially available silicon-carbide (SiC) power MOSFETs used within a matrix converter topology. The improvements at switch level over conventional packaging and integration solutions translate into higher efficiency, power density (in terms of volume and weight) and reliability at system level. In view of typical application domains (e.g., renewable energies, solid-state transformation, smart grids, electric transport), requiring harsh environment withstand capability with high reliability and availability levels, an AC-to-AC matrix converter is chosen as a particularly relevant case study. The paper also addresses two aspects of growing relevance: reliable manufacturability and preventive maintenance compatible modular system assembly for reduced impact of single component failure on system availability.

Item Type: Conference or Workshop Item (Paper)
Additional Information: Published in: Proceedings of 2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA), IEEE, 2016. ISBN 978-1-5090-1576-4. doi:10.1109/WiPDA.2016.7799935. © 2016 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
Keywords: Wide Band-Gap power Devices, SiC Power MOSFETs, matrix converters, integration
Schools/Departments: University of Nottingham, UK > Faculty of Engineering > Department of Electrical and Electronic Engineering
Related URLs:
Depositing User: Burns, Rebecca
Date Deposited: 24 Mar 2017 11:02
Last Modified: 24 Mar 2017 11:04
URI: http://eprints.nottingham.ac.uk/id/eprint/41508

Actions (Archive Staff Only)

Edit View Edit View