Interconnect materials enabling IGBT modules to achieve stable short circuit failure behavior

Li, Jianfeng, Yaqub, Imran, Corfield, Martin and Johnson, Christopher Mark (2017) Interconnect materials enabling IGBT modules to achieve stable short circuit failure behavior. IEEE Transactions on Components, Packaging, and Manufacturing Technology, 7 (5). pp. 734-744. ISSN 2156-3950

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Insulated gate bipolar transistor (IGBT) modules, which can fail to stable short-circuit mode, have major applications in electricity network-related fields. Sn-3.5Ag solder joints and sintered Ag joints for the die attachment and Mo, Cu, Sn-3.5Ag, Al, and Ag foils for the top side insert (TSI) material in press pack like single IGBT samples have been investigated using overcurrent and current passage tests. The results reveal that Sn-3.5Ag solder joints in combination with Sn-3.5Ag, Al, or Ag foils can be employed to achieve stable short-circuit failure mode, where the best results are achieved with Ag foils. This can be attributed to the formation of conductive networks/channels through the failed IGBT and good alignment between the residual TSI material and the failed IGBT.

Item Type: Article
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Keywords: Electronics packaging, Failure to short circuit, Finite element analysis, Overcurrent failure, Power module, Scanning electronic microscopy, Semiconductor device packaging
Schools/Departments: University of Nottingham, UK > Faculty of Engineering > Department of Electrical and Electronic Engineering
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Depositing User: Eprints, Support
Date Deposited: 22 Mar 2017 11:59
Last Modified: 04 May 2020 18:41

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