Temperature and thickness dependence of tunneling anisotropic magnetoresistance in exchange-biased Py/IrMn/MgO/Ta stacks

Reichlová, H. and Novák, V. and Kurosaki, Y. and Yamada, M. and Yamamoto, H. and Nishide, A. and Hayakawa, J. and Takahashi, H. and Marysko, M. and Wunderlich, J. and Marti, X. and Jungwirth, T. (2016) Temperature and thickness dependence of tunneling anisotropic magnetoresistance in exchange-biased Py/IrMn/MgO/Ta stacks. Materials Research Express, 3 . 076406/1-076406/5. ISSN 2053-1591

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Abstract

Weinvestigate the thickness and temperature dependence of a series of Ni0.8Fe0.2/Ir0.2Mn0.8 bilayer samples with varying thickness ratio of the ferromagnet/antiferromagnet (tFM tAFM) in order to explore the exchange coupling strengths in tunneling anisotropic magnetoresistance (TAMR) devices. Specific values of tFM tAFM lead to four distinct scenarios with specific electric responses to moderate magnetic fields. The characteristic dependence of the measured TAMR signal on applied voltage allows us to confirm its persistence up to room temperature despite an overlapped contribution by a thermal magnetic noise.

Item Type: Article
Schools/Departments: University of Nottingham, UK > Faculty of Science > School of Physics and Astronomy
Identification Number: 10.1088/2053-1591/3/7/076406
Depositing User: Jungwirth, Tomas
Date Deposited: 03 Feb 2017 14:28
Last Modified: 14 Oct 2017 09:11
URI: http://eprints.nottingham.ac.uk/id/eprint/40287

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