Excitonic mobility edge and ultra-short photoluminescence decay time in n-type GaAsN

Eßer, F. and Winner, S. and Patanè, Amalia and Helm, M. and Schneider, H. (2016) Excitonic mobility edge and ultra-short photoluminescence decay time in n-type GaAsN. Applied Physics Letters, 109 (18). 182113/1-182113/4. ISSN 1077-3118

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Abstract

We use time-resolved photoluminescence (PL) spectroscopy to study the recombination dynamics in Si-doped GaAsN semiconductor alloys with a nitrogen content up to 0.2%. The PL decay is predominantly monoexponential and exhibits a strong energy dispersion. We find ultra-short decay times on the high-energy side and long decay times on the low-energy side of the photoluminescence spectrum. This asymmetry can be explained by the existence of an additional non-radiative energy transfer channel and is consistent with previous studies on intrinsic GaAsN epilayers. However, the determined maximum decay times of GaAsN:Si are significantly reduced in comparison to undoped GaAsN. The determined excitonic mobility edge energy constantly decreases with an increase in the N content, in agreement with the two-level band anticrossing model.

Item Type: Article
Schools/Departments: University of Nottingham, UK > Faculty of Science > School of Physics and Astronomy
Identification Number: 10.1063/1.4966949
Depositing User: Eprints, Support
Date Deposited: 04 Jan 2017 13:17
Last Modified: 13 Oct 2017 19:15
URI: http://eprints.nottingham.ac.uk/id/eprint/39577

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