Investigation of electrically active defects in InGaAs quantum wire intermediate-band solar cells using deep-level transient spectroscopy (DLTS) technique

Al Saqri, Noor alhuda and Felix, Jorlandio F. and Aziz, Mohsin and Kunets, Vasyl P. and Jameel, Dler Adil and Taylor, David and Henini, M. and Abd El-sadek, Mahmmoud S. and Furrow, Colin and Ware, Morgan E. and Benamara, Mourad and Mortazavi, Mansour and Salamo, Gregory (2016) Investigation of electrically active defects in InGaAs quantum wire intermediate-band solar cells using deep-level transient spectroscopy (DLTS) technique. Nanotechnology, 28 (4). pp. 1-12. ISSN 1361-6528

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Abstract

InGaAs quantum wire (QWr) intermediate-band solar cell based nanostructures grown by molecular beam epitaxy are studied. The electrical and interface properties of these solar cell devices, as determined by current–voltage (I–V) and capacitance–voltage (C-V) techniques, were found to change with temperature over a wide range of 20–340 K. The electron and hole traps present in these devices have been investigated using deep-level transient spectroscopy (DLTS). The DLTS results showed that the traps detected in the QWr-doped devices are directly or indirectly related to the insertion of the Si δ-layer used to dope the wires. In addition, in the QWr-doped devices, the decrease of the solar conversion efficiencies at low temperatures and the associated decrease of the integrated external quantum efficiency through InGaAs could be attributed to detected traps E1QWR_D, E2QWR_D, and E3QWR_D with activation energies of 0.0037, 0.0053, and 0.041 eV, respectively.

Item Type: Article
Keywords: quantum wire intermediate-band solar cells, IV, C-V, DLTS, defect
Schools/Departments: University of Nottingham, UK > Faculty of Science > School of Physics and Astronomy
Identification Number: 10.1088/1361-6528/28/4/045707
Depositing User: Henini, Mohamed
Date Deposited: 04 Jan 2017 14:59
Last Modified: 14 Oct 2017 11:25
URI: http://eprints.nottingham.ac.uk/id/eprint/39521

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