Electrical performance of conducting polymer (SPAN) grown on GaAs with different substrate orientations

Jameel, D.A. and Aziz, M. and Felix, J.F. and Al Saqri, N. and Taylor, D. and Albalawi, H. and Alghamdi, H. and Al Mashary, F. and Henini, M. (2016) Electrical performance of conducting polymer (SPAN) grown on GaAs with different substrate orientations. Applied Surface Science, 387 . pp. 228-236. ISSN 0169-4332

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Abstract

This article reports the effect of n-type GaAs substrate orientation, namely (100), (311)A and (311)B, on the electrical properties of sulfonated polyaniline (SPAN)/GaAs heterojunction devices. In addition, the inhomogeneity of the interface between various GaAs substrates and SPAN is investigated in terms of barrier height and ideality factor by performing I–V measurements at different temperatures (20–420K). The I–V results indicate that the value of the rectification ratio (IF/IR) at 0.5V is higher for SPAN/(311)B GaAs samples than for SPAN/(100) GaAs and SPAN/(311)A GaAs samples. Moreover, the barrier height decreases and the ideality factor increases with decreasing temperature for all three heterostructure devices. The high value of mean barrier ˚¯ b of SPAN/(311)B (calculated from the plots of ˚b0 as a function of 1/2kT) confirms that the GaAs substrate orientation results in an increase of barrier homogeneities. Furthermore,the C-V characteristics were obtained at room temperature. The C-V measurements showed that the carrier distributions at the interface and away from the interface in high index (311) GaAs orientations are more uniform and have better barrier homogeneity than those grown on the conventional (100) GaAs substrates.

Item Type: Article
Keywords: (100) GaAs (311)A GaAs (311)B GaAs I–V and C-V
Schools/Departments: University of Nottingham, UK > Faculty of Science > School of Physics and Astronomy
Identification Number: 10.1016/j.apsusc.2016.06.097
Depositing User: Henini, Mohamed
Date Deposited: 11 Jan 2017 08:34
Last Modified: 12 Oct 2017 22:02
URI: http://eprints.nottingham.ac.uk/id/eprint/39517

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