SiC/GaN power semiconductor devices theoretical comparison and experimental evaluation

Li, Ke and Evans, Paul and Johnson, Christopher Mark (2016) SiC/GaN power semiconductor devices theoretical comparison and experimental evaluation. In: 13th IEEE Vehicle Power and Propulsion Conference (VPPC 2016), 17-20 Oct 2016, Hangzhou, China.

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Abstract

SiC and GaN power transistors conduction loss and switching losses are compared in this paper. In order to compare performance of the same power rating device, a theoretical analysis is given to compare SiC device conduction loss and switching losses change when device maximal blocking voltage reduces by half. Then static and dynamic characteristics of commercial SiC and GaN power transistors are compared and it is shown that GaN-HEMT would still have smaller ON-state resistance and inter-electrode capacitance in comparison with a 600V SiC device. After that, switching losses E8w of a GaN-HEMT is measured and compared with that of a 1200V SiC-JFET and a 600V SiC-MOSFET, in which it is shown that E8w of a GaN-HEMT is smaller than a SiC power transistor with the same power rating.

Item Type: Conference or Workshop Item (Paper)
Additional Information: © 2016 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
Keywords: Wide bandgap power semiconductor device; GaN-HEMT; SiC-JFET; SiC-MOSFET; Conduction loss; Switching loss
Schools/Departments: University of Nottingham, UK > Faculty of Engineering > Department of Electrical and Electronic Engineering
Related URLs:
URLURL Type
http://www.vppc2016.org/UNSPECIFIED
Depositing User: Burns, Rebecca
Date Deposited: 17 Nov 2016 11:12
Last Modified: 25 Jan 2017 14:25
URI: http://eprints.nottingham.ac.uk/id/eprint/38780

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