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Li, Ke, Evans, Paul and Johnson, Christopher Mark (2016) Developing power semiconductor device model for virtual prototyping of power electronics systems. In: 13th IEEE Vehicle Power and Propulsion Conference (VPPC 2016), 17-20 Oct 2016, Hangzhou, China.

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Abstract

Virtual prototyping (VP) is very important for power electronics systems design. A virtual prototyping design tool based on different modelling technology and model order reduction is proposed in the paper. In order to combine circuit electromagnetic model with power semiconductor device models, a SiC-JFET behavioural model is presented and implemented in the design tool. A half bridge circuit using SiC-JFET devices is thus represented in the VP software. The presented SiC-JFET behavioural model is then validated by comparing with experimental measurements on switching waveforms.

Item Type:	Conference or Workshop Item (Paper)
RIS ID:	https://nottingham-repository.worktribe.com/output/822988
Additional Information:	© 2016 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
Keywords:	Virtual prototyping; Model order reduction; Power semiconductor device modelling; Behavioural model; Switching waveforms
Schools/Departments:	University of Nottingham, UK > Faculty of Engineering > Department of Electrical and Electronic Engineering
Related URLs:	URL URL Type http://www.vppc2016.org/ UNSPECIFIED
Depositing User:	Burns, Rebecca
Date Deposited:	17 Nov 2016 11:03
Last Modified:	04 May 2020 18:16
URI:	https://eprints.nottingham.ac.uk/id/eprint/38779

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