Reliable integration of a high performance multi-chip half-bridge SiC power module

Mouawad, Bassem and Li, Jianfeng and Castellazzi, Alberto and Johnson, Christopher Mark (2016) Reliable integration of a high performance multi-chip half-bridge SiC power module. In: 6th Electronics System-Integration Technology Conference (ESTC’16), 13-16 Sept. 2016, Grenoble, France.

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Abstract

Silicon carbide (SiC) devices have been adopted to push the boundaries further in terms of power density, conversion efficiency, switching speed or thermal capability. To have the benefit of such semiconductors, new packaging should be developed to meet all the advantages. In this paper, we present a reliable integrated concept of a new packaging solution for multi-chip SiC devices aiming to have a very low parasitic inductance in order to have high switching frequencies and ensure a good reliability for long-term operation.

Item Type: Conference or Workshop Item (Paper)
Schools/Departments: University of Nottingham UK Campus > Faculty of Engineering > Department of Electrical and Electronic Engineering
Related URLs:
URLURL Type
http://www.estc2016.eu/estc-2016/about-estc/Organisation
Depositing User: Burns, Rebecca
Date Deposited: 03 Oct 2016 11:24
Last Modified: 10 Oct 2016 23:56
URI: http://eprints.nottingham.ac.uk/id/eprint/37317

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