Hybrid half-bridge package for high voltage application

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Mouawad, Bassem, Li, Jianfeng, Castellazzi, Alberto and Johnson, Christopher Mark (2015) Hybrid half-bridge package for high voltage application. In: 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 12-16 June 2016, Prague, Czech Republic.

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Official URL: http://ieeexplore.ieee.org/document/7520799/?arnumber=7520799

Abstract

3D power module structures allow for better cooling and lower parasitic inductances compared with the classical planar technology. In this paper, we present a hybrid half-bridge in a 3D packaging configuration, dedicated for high voltage application. A dynamic electrical test of the package is presented.

Item Type:	Conference or Workshop Item (Paper)
RIS ID:	https://nottingham-repository.worktribe.com/output/769366
Additional Information:	© 2016 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. doi:10.1109/ISPSD.2016.7520799
Keywords:	Half-Bridge, 3-D Packaging, Power Electronics, High Voltage, Si IGBT, SiC Diodes
Schools/Departments:	University of Nottingham, UK > Faculty of Engineering > Department of Electrical and Electronic Engineering
Depositing User:	Burns, Rebecca
Date Deposited:	03 Oct 2016 11:10
Last Modified:	04 May 2020 17:26
URI:	https://eprints.nottingham.ac.uk/id/eprint/37314

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