Influence of design parameters on the short-circuit ruggedness of SiC Power MOSFETs
Romano, Gianpaolo and Riccio, Michele and Maresca, Luca and Fayyaz, Asad and Castellazzi, Alberto (2016) Influence of design parameters on the short-circuit ruggedness of SiC Power MOSFETs. In: 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 12-16 Jun 2016, Prague, Czech Republic.
This work aims to present an investigation on short-circuit (SC) failure behaviour of SiC Power MOSFETs due to the onset of thermal runaway. As inferable from experimental outcomes, it is related to the formation of hotspot, whose exact location is mainly unpredictable and dictated by device structure and design parameters non-uniformities. TCAD simulations were performed to examine the impact of some parameters mismatch on hotspot formation and failure occurrence
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