Influence of design parameters on the short-circuit ruggedness of SiC Power MOSFETs

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Romano, Gianpaolo, Riccio, Michele, Maresca, Luca, Fayyaz, Asad and Castellazzi, Alberto (2016) Influence of design parameters on the short-circuit ruggedness of SiC Power MOSFETs. In: 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 12-16 Jun 2016, Prague, Czech Republic.

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Abstract

This work aims to present an investigation on short-circuit (SC) failure behaviour of SiC Power MOSFETs due to the onset of thermal runaway. As inferable from experimental outcomes, it is related to the formation of hotspot, whose exact location is mainly unpredictable and dictated by device structure and design parameters non-uniformities. TCAD simulations were performed to examine the impact of some parameters mismatch on hotspot formation and failure occurrence

Item Type: Conference or Workshop Item (Paper)
RIS ID: https://nottingham-repository.worktribe.com/output/799087
Additional Information: Published in: 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD). ISBN: 978-1-4673-8770-5. pp. 47-50, doi:10.1109/ISPSD.2016.7520774 ©2016 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
Keywords: Silicon Carbide (SiC) Power MOSFET; Short-circuit failure; Short-Circuit ruggedness; Thermal Runaway; hot-spot; TCAD 2D simulation
Schools/Departments: University of Nottingham, UK > Faculty of Engineering > Department of Electrical and Electronic Engineering
Related URLs:
URLURL Type
http://www.ispsd2016.com/UNSPECIFIED
Depositing User: Burns, Rebecca
Date Deposited: 08 Sep 2016 13:19
Last Modified: 04 May 2020 17:59
URI: https://eprints.nottingham.ac.uk/id/eprint/36365

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