Single pulse avalanche robustness and repetitive stress ageing of SiC power MOSFETs

Fayyaz, A. and Yang, L. and Riccio, M. and Castellazzi, A. and Irace, A. (2014) Single pulse avalanche robustness and repetitive stress ageing of SiC power MOSFETs. Microelectronics Reliability, 54 (9-10). pp. 2185-2190. ISSN 0026-2714

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Abstract

This paper presents an extensive electro-thermal characterisation of latest generation silicon carbide (SiC) Power MOSFETs under unclamped inductive switching (UIS) conditions. Tests are carried out to thoroughly understand the single pulse avalanche ruggedness limits of commercial SiC MOSFETs and assess their aging under repetitive stress conditions. Both a functional and a structural characterisation of the transistors is presented, with the aim of informing future device technology development for robust and reliable power system development.

Item Type: Article
Keywords: SiC; Power MOSFETs; Wide bandgap; Device characterisation; Reliability; Robustness
Schools/Departments: University of Nottingham UK Campus > Faculty of Engineering > Department of Electrical and Electronic Engineering
Identification Number: https://doi.org/10.1016/j.microrel.2014.07.078
Depositing User: Eprints, Support
Date Deposited: 03 Aug 2016 13:20
Last Modified: 14 Sep 2016 05:57
URI: http://eprints.nottingham.ac.uk/id/eprint/35685

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