Ultra-low inductance design for a GaN HEMT based 3L-ANPC inverter

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Gurpinar, Emre, Castellazzi, Alberto, Iannuzzo, Francesco, Yang, Yongheng and Blaabjerg, Frede (2016) Ultra-low inductance design for a GaN HEMT based 3L-ANPC inverter. In: IEEE Energy Conversion Congress & Expo (ECCE 2016), 18-22 Sept 2016, Milwaukee, Wisconsin, USA. (In Press)

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Abstract

In this paper, an ultra-low inductance power cell design for a 3L-ANPC based on 650 V GaN HEMT devices is presented. The 3L-ANPC topology with GaN HEMT devices and the selected modulation scheme suitable for wide-bandgap (WBG) devices are presented. The commutation loops, which are the main contributors to voltage overshoots and increase of switching losses, are discussed. The ultra-low inductance power cell design based on a four layer PCB with the aim to maximise the switching performance of GaN HEMTs is explained. Gate driver design for GaN HEMT devices is presented. Common-mode behaviours based on SPICE model of the converter is analysed. Experimental results on the designed 3L-ANPC with the output power of up to 1 kW are presented, which verifies the performance of the proposed design in terms of ultra-low inductance.

Item Type:

Conference or Workshop Item (Paper)

RIS ID:

https://nottingham-repository.worktribe.com/output/782187

Additional Information:

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Keywords:

Wide Bandgap (WBG) Power Devices, Gallium-Nitride (GaN), HEMT, Three-Level Active Neutral Point Clamped (3L-ANPC) Converter, Photovoltaic (PV) Systems

Schools/Departments:

University of Nottingham, UK > Faculty of Engineering > Department of Electrical and Electronic Engineering

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