Ultra-low inductance design for a GaN HEMT based 3L-ANPC inverterTools Gurpinar, Emre, Castellazzi, Alberto, Iannuzzo, Francesco, Yang, Yongheng and Blaabjerg, Frede (2016) Ultra-low inductance design for a GaN HEMT based 3L-ANPC inverter. In: IEEE Energy Conversion Congress & Expo (ECCE 2016), 18-22 Sept 2016, Milwaukee, Wisconsin, USA. (In Press) Full text not available from this repository.AbstractIn this paper, an ultra-low inductance power cell design for a 3L-ANPC based on 650 V GaN HEMT devices is presented. The 3L-ANPC topology with GaN HEMT devices and the selected modulation scheme suitable for wide-bandgap (WBG) devices are presented. The commutation loops, which are the main contributors to voltage overshoots and increase of switching losses, are discussed. The ultra-low inductance power cell design based on a four layer PCB with the aim to maximise the switching performance of GaN HEMTs is explained. Gate driver design for GaN HEMT devices is presented. Common-mode behaviours based on SPICE model of the converter is analysed. Experimental results on the designed 3L-ANPC with the output power of up to 1 kW are presented, which verifies the performance of the proposed design in terms of ultra-low inductance.
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