Overload robust IGBT design for SSCB application

Supono, I. and Urresti, J. and Castellazzi, Alberto and Flores, D. (2014) Overload robust IGBT design for SSCB application. Microelectronics Reliability, 54 (9/10). pp. 1906-1910. ISSN 0026-2714

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Abstract

This paper presents an optimised power semiconductor architecture based on the CIGBT approach to be used in solid-state circuit breaker (SSCB) applications where the conduction losses have to be as low as possible without compromising the forward voltage blocking capability. Indeed, a high overcurrent turn-off and short-circuit withstand capabilities have to be ensured. Starting from a standard NPT-IGBT design for switching applications, the results show that the proposed device, which is optimised by the application of the individual clustered concept, offers a reduction in conduction losses of 13%, without compromise on voltage blocking capability. An original design solution is implemented to further ensure short-circuit and overload turn-off capabilities at maximum ambient temperature and twice the nominal rated current.

Item Type: Article
Keywords: Robust; Power device; IGBT; SSCB
Schools/Departments: University of Nottingham UK Campus > Faculty of Engineering > Department of Electrical and Electronic Engineering
Identification Number: https://doi.org/10.1016/j.microrel.2014.07.146
Depositing User: Eprints, Support
Date Deposited: 14 Jul 2016 11:12
Last Modified: 17 Sep 2016 08:24
URI: http://eprints.nottingham.ac.uk/id/eprint/35023

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