GaN-HEMT dynamic ON-state resistance characterisation and modelling

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Li, Ke, Evans, Paul and Johnson, Christopher Mark (2016) GaN-HEMT dynamic ON-state resistance characterisation and modelling. In: 17th IEEE Workshop on Control and Modeling for Power Electronics, COMPEL 2016, 27–30 June 2016, Trondheim, Norway.

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Abstract

GaN-HEMTs suffer from trapping effects which might increase device ON-state resistance (RDS(on)) values. Thus, dynamic RDS(on) of a commercial GaN-HEMT is characterized at different bias voltages in the paper by a proposed measurement circuit. Based on the measurement results, a behavioural model is proposed to represent device dynamic RDS(on) values, in which trapping and detrapping time constant is represented by a series of RC network. The model is simulated in PSPICE, of which the simulation results of RDS(on) values are compared and validated with the measurement when device switches in a power converter with different duty cycles and switching voltages. The results show that RDS(on) values of this device would increase due to trapping effects.

Item Type: Conference or Workshop Item (Paper)
RIS ID: https://nottingham-repository.worktribe.com/output/792893
Additional Information: ISBN 9781509018154
Keywords: GaN-HEMT; Dynamic ON-state resistance; Power semiconductor device characterisation; Power semiconductor device modelling; Behavioural model
Schools/Departments: University of Nottingham, UK > Faculty of Engineering > Department of Electrical and Electronic Engineering
Related URLs:
URLURL Type
http://sites.ieee.org/compel2016/Organisation
Depositing User: Burns, Rebecca
Date Deposited: 13 Jul 2016 14:58
Last Modified: 04 May 2020 17:54
URI: https://eprints.nottingham.ac.uk/id/eprint/34921

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