Characterization of p-GaN1−xAsx/n-GaN PN junction diodes

Qian, H. and Lee, K.B. and Vajargah, S.Hosseini and Novikov, S.V. and Guiney, I. and Zhang, S. and Zaidi, Z.H. and Jiang, S. and Wallis, D.J. and Foxon, C.T. and Humphreys, C.J. and Houston, P.A. (2016) Characterization of p-GaN1−xAsx/n-GaN PN junction diodes. Semiconductor Science and Technology, 31 (6). 065020. ISSN 0268-1242

[img]
Preview
PDF - Requires a PDF viewer such as GSview, Xpdf or Adobe Acrobat Reader
Download (462kB) | Preview

Abstract

The structural properties and electrical conduction mechanisms of p-type amorphous GaN1−xAsx/n-type crystalline GaN PN junction diodes are presented. A hole concentration of 8.5×1019 cm−3 is achieved which allows a specific contact resistance of 1.3×10−4 Ω cm2. An increased gallium beam equivalent pressure during growth produces reduced resistivity but can result in the formation of a polycrystalline structure. The conduction mechanism is found to be influenced by the crystallinity of the structure. Temperature dependent current voltage characteristics at low forward bias (<0.35 V) show that conduction is recombination dominated in the amorphous structure whereas a transition from tunneling to recombination is observed in the polycrystalline structure. At higher bias, the currents are space charge limited due to the low carrier density in the n-type region. In reverse bias, tunneling current dominates at low bias(<0.3 V) and recombination current becomes dominant at higher reverse bias.

Item Type: Article
Keywords: GaN, PN diode, conduction mechanism, p-type doping, amorphous GaNAs
Schools/Departments: University of Nottingham, UK > Faculty of Science > School of Physics and Astronomy
Identification Number: 10.1088/0268-1242/31/6/065020
Depositing User: Eprints, Support
Date Deposited: 11 Jul 2016 12:30
Last Modified: 22 May 2017 21:22
URI: http://eprints.nottingham.ac.uk/id/eprint/34804

Actions (Archive Staff Only)

Edit View Edit View