Compositional variations in In0.5Ga0.5N nanorods grown by molecular beam epitaxy
Cherns, D. and Webster, R. F. and Novikov, S. V. and Foxon, C. Thomas and Fischer, A. M. and Ponce, F. A. and Haigh, S. J. (2014) Compositional variations in In0.5Ga0.5N nanorods grown by molecular beam epitaxy. Nanotechnology, 25 (21). 215705/1-215705/6. ISSN 1361-6528
The composition of InxGa1 − xN nanorods grown by molecular beam epitaxy with nominal x = 0.5 has been mapped by electron microscopy using Z-contrast imaging and x-ray microanalysis. This shows a coherent and highly strained core-shell structure with a near atomically sharp boundary between a Ga-rich shell (x∼0.3) and an In-rich core (x∼ 0.7), which itself has In- and Ga-rich platelets alternating along the growth axis. It is proposed that the shell and core regions are lateral and vertical growth sectors, with the core structure determined by spinodal decomposition.
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