Electronic band structure of highly mismatched GaN1−xSbx alloys in a broad composition range

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Segercrantz, N., Yu, K.M., Ting, M., Sarney, W.L., Svensson, S.P., Novikov, S.V., Foxon, C.T. and Walukiewicz, W. (2015) Electronic band structure of highly mismatched GaN1−xSbx alloys in a broad composition range. Applied Physics Letters, 107 (14). 142104/1-142104/4. ISSN 1077-3118

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Abstract

In this letter, we study the optical properties of GaN1�xSbx thin films. Films with an Sb fraction up to 42% were synthesized by alternating GaN-GaSb layers at a constant temperature of 325 �C. The measured optical absorption data of the films are interpreted using a modified band anticrossing model that is applicable to highly mismatched alloys such as GaN1�xSbx in the entire composition range. The presented model allows us to more accurately determine the band gap as well as the band

edges over the entire composition range thereby providing means for determining the composition for, e.g., efficient spontaneous photoelectrochemical cell applications

Item Type: Article
Additional Information: Electronic band structure of highly mismatched GaN1−xSbx alloys in a broad composition range. N. Segercrantz1,2,a), K.M. Yu, M. Ting, W.L. Sarney, S.P. Svensson, S.V. Novikov, C.T. Foxon and W. Walukiewicz. Appl. Phys. Lett. 107, 142104 (2015); http://dx.doi.org/10.1063/1.4932592 
Schools/Departments: University of Nottingham, UK > Faculty of Science > School of Physics and Astronomy
Identification Number: https://doi.org/10.1063/1.4932592
Depositing User: Eprints, Support
Date Deposited: 08 Jul 2016 08:33
Last Modified: 12 Oct 2017 21:00
URI: https://eprints.nottingham.ac.uk/id/eprint/34755

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