Dynamics of electronic transitions and frequency dependence of negative capacitance in semiconductor diodes under high forward bias

Bansal, Kanika and Henini, M. and Alshammari, Marzook S. and Datta, Shouvik (2014) Dynamics of electronic transitions and frequency dependence of negative capacitance in semiconductor diodes under high forward bias. Applied Physics Letters, 105 (12). 123503/1-123503/4. ISSN 1077-3118

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Abstract

We observed qualitatively dissimilar frequency dependence of negative capacitance under high charge injection in two sets of functionally different junction diodes: III-V based light emitting and Si-based non-light emitting diodes. Using an advanced approach based on bias activated differential capacitance, we developed a generalized understanding of negative capacitance phenomenon which can be extended to any diode based device structure. We explained the observations as the mutual competition of fast and slow electronic transition rates which are different in different devices. This study can be useful in understanding the interfacial effects in semiconductor heterostructures and may lead to superior device functionality.

Item Type: Article
Additional Information: c2014 AIP Publishing LLC Bansal, K and Henini, M and Alshammari, M.S. and Datta, S (2014) Dynamics of Electronic Transitions and Frequency Dependence of Negative Capacitance in Semiconductor Diodes Under High Forward Bias. Applied Physics Letters, 105 http://scitation.aip.org/content/aip/journal/apl/105/12/10.1063/1.4896541
Schools/Departments: University of Nottingham UK Campus > Faculty of Science > School of Physics and Astronomy
Identification Number: https://doi.org/10.1063/1.4896541
Depositing User: Henini, Mohamed
Date Deposited: 01 Jul 2016 08:41
Last Modified: 26 Sep 2016 15:11
URI: http://eprints.nottingham.ac.uk/id/eprint/34555

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