III-VI metal chalcogenide semiconductor nanosheets and heterostructures
Mudd, Garry William (2016) III-VI metal chalcogenide semiconductor nanosheets and heterostructures. PhD thesis, University of Nottingham.
This thesis presents an investigation into the properties of III-VI metal chalcogenide semiconductor nanosheets and demonstrates their capability to enhance graphene-based optoelectronics. Strong quantization effects and tunable near-infrared-to-visible (NIR-to-VIS) photoluminescence emission are reported in mechanically exfoliated crystals of gamma-rhombohedral semiconducting InSe at room temperature. The optical properties of InSe nanosheets differ qualitatively from those reported for transition metal dichalcogenides and indicate a crossover from a direct-to-indirect band gap semiconductor when the InSe nanosheet thickness, L, is reduced to a few nanometres, corresponding to the emergence of a ‘Mexican hat’ energy dispersion for the valence band.
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