Molecular beam epitaxy of free-standing bulk wurtzite AlxGa1-xN layers using a highly efficient RF plasma source

Novikov, Sergei V. and Staddon, C.R. and Sahonta, S-L and Oliver, R.A. and Humphreys, C.J. and Foxon, C.T. (2016) Molecular beam epitaxy of free-standing bulk wurtzite AlxGa1-xN layers using a highly efficient RF plasma source. Physica Status Solidi C: Current Topics in Solid State Physics, 13 (5-6). pp. 217-220. ISSN 1862-6351

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Abstract

Recent developments with group III nitrides suggest AlxGa1-xN based LEDs can be new alternative commer-cially viable deep ultra-violet light sources. Due to a sig-nificant difference in the lattice parameters of GaN and AlN, AlxGa1-xN substrates would be preferable to either GaN or AlN for ultraviolet device applications. We have studied the growth of free-standing wurtzite AlxGa1-xN bulk crystals by plasma-assisted molecular beam epitaxy (PA-MBE) using a novel RF plasma source. Thick wurtz-ite AlxGa1-xN films were grown by PA-MBE on 2-inch GaAs (111)B substrates and were removed from the GaAs substrate after growth to provide free standing AlxGa1-xN samples. Growth rates of AlxGa1-xN up to 3 μm/h have been demonstrated. Our novel high efficiency RF plasma source allowed us to achieve free-standing bulk AlxGa1-xN layers in a single day’s growth, which makes our MBE bulk growth technique commercially vi-able.

Item Type: Article
Keywords: Molecular bean epitaxy; Semiconducting III-V materials; Nitrides; Substrates
Schools/Departments: University of Nottingham UK Campus > Faculty of Science > School of Physics and Astronomy
Identification Number: https://doi.org/10.1002/pssc.201510166
Depositing User: Eprints, Support
Date Deposited: 20 Apr 2016 09:38
Last Modified: 17 Sep 2016 13:39
URI: http://eprints.nottingham.ac.uk/id/eprint/32814

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