Experimental comparison of a matrix converter using Si IGBT and SiC MOSFETs

Trentin, Andrew and De Lillo, Liliana and Empringham, Lee and Wheeler, Pat and Clare, Jon C. (2015) Experimental comparison of a matrix converter using Si IGBT and SiC MOSFETs. IEEE Journal of Emerging and Selected Topics in Power Electronics, 3 (2). pp. 542-554. ISSN 2168-6785

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Abstract

This paper presents an analytical and experimental comparison between comparable Silicon (Si) IGBTs and Silicon Carbide (SiC) MOSFETS when used in a direct AC/AC matrix converter circuit. The switching performance of the two devices is analysed and the efficiency / losses measured in order to develop a loss model which will help engineers to design and develop matrix converter circuits using these types of devices. Particular attention is given in the paper to the discrepancies found between the data-sheet values and the measured data. The EMI performance of the two matrix converters is also determined and the implication of using high speed devices from both an EMI and an efficiency point of view is formulated together with an improved input filter design.

Item Type: Article
Additional Information: (c) 2015 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works.
Keywords: IGBTs; MOSFETs; Matrix converter;insulated gate bipolar; transistors (IGBTs); matrix converter (MC)
Schools/Departments: University of Nottingham UK Campus > Faculty of Engineering > Department of Electrical and Electronic Engineering
Identification Number: https://doi.org/10.1109/JESTPE.2014.2381001
Depositing User: Burns, Rebecca
Date Deposited: 08 Mar 2016 15:25
Last Modified: 14 Sep 2016 23:53
URI: http://eprints.nottingham.ac.uk/id/eprint/32152

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