Circular polarization in n-type resonant tunneling diodes with Si delta-doping in the quantum well
Herval, L.K S. and Galeti, H.V.A. and Orsi Gordo, V. and Galvao Gobato, Y. and Brasil, M.J.S.P. and Taylor, D. and Henini, M. (2014) Circular polarization in n-type resonant tunneling diodes with Si delta-doping in the quantum well. In: 29th Symposium on Microelectronics Technology and Devices (SBMicro) 2014, 1-5 September 2014, Aracaju-Sergipe, Brazil.
Official URL: http://dx.doi.org/10.1109/SBMicro.2014.6940126
In this work, we have investigated magneto-transport and polarization resolved photoluminescence of a GaAs/AlGaAs resonant tunneling diode with Si delta-doping at the center of the quantum well under a magnetic field parallel to the tunnel current. Three resonant peaks were observed in the current-voltage characteristics curve (J(V)) which were associated to donor-assisted resonant tunneling, electron resonant tunneling and to phonon-assisted resonant tunneling. The optical emission from GaAs contact layers shows evidence of highly spin-polarized two-dimensional electron and hole gases which affect the spin-polarization of carriers in the well. The quantum well photoluminescence shows strong circular polarization degrees with values up to 85% under 15T at the donor assisted resonant tunneling peak voltage. Our results can be exploited for future development of voltage-controlled spintronics devices.
Actions (Archive Staff Only)