Nanoscale characterisation of MBE-grown GaMnN / (001) GaAs

Fay, Mike W. and Han, Y. and Novikov, Sergei V. and Edmonds, K.W. and Gallagher, B.L. and Campion, R.P. and Staddon, C.R. and Foxon, C.T. and Brown, Paul D. (2008) Nanoscale characterisation of MBE-grown GaMnN / (001) GaAs. In: Microscopy of semiconducting materials 2007: proceedings of the 15th conference, 2-5 April 2007, Cambridge, UK. Springer proceedings in physics (120). Springer-Verlag, Dordrecht, pp. 103-106. ISBN 9781402086144

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Abstract

The growth of cubic (Ga,Mn)N/(001)GaAs heterostructures by plasma assisted molecular beam epitaxy has been appraised as a function of Ga:N ratio, Mn concentration and growth temperature. The combined analytical techniques of EFTEM, EDX, CBED and dark field imaging have been used to appraise the Mn distributions within (Ga,Mn)N epilayers. Improved incorporation efficiency of Mn is associated with growth under N-rich conditions, but Mn incorporation may be enhanced under Ga-rich conditions at reduced growth temperatures. The surfactant behaviour of Mn during the growth of this spintronic system determines the resultant alloy composition.

Item Type: Book Section
Additional Information: The original publication is available at www.springerlink.com
Uncontrolled Keywords: TEM, spintronics, GaMnN, MBE
Schools/Departments: University of Nottingham UK Campus > Faculty of Engineering
Depositing User: Brown, Prof Paul D
Date Deposited: 12 Aug 2011 15:28
Last Modified: 12 Aug 2011 15:28
URI: http://eprints.nottingham.ac.uk/id/eprint/1471

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