Structural characterisation of MBE grown zinc-blende Ga1-xMnxN/GaAs(001) as a function of Ga flux

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Han, Y., Fay, Mike W., Brown, Paul D., Novikov, Sergei V., Edmonds, K.W., Gallagher, B.L., Campion, R.P. and Foxon, C.T. (2005) Structural characterisation of MBE grown zinc-blende Ga1-xMnxN/GaAs(001) as a function of Ga flux. In: Microscopy of semiconducting materials: proceedings of the 14th conference: April 11-14, 2005, Oxford, UK. Springer proceedings in physics (107). Springer-Verlag, Berlin, pp. 155-158. ISBN 9783540319146

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Abstract

Ga1-xMnxN films grown on semi-insulating GaAs(001) substrates at 680°C with fixed Mn flux and varied Ga flux demonstrated a transition from zinc-blende/wurtzite mixed phase growth for low Ga flux (N-rich conditions) to zinc-blende single phase growth with surface Ga droplets for high Ga flux (Ga-rich conditions). N-rich conditions were found favourable for Mn incorporation in GaN lattice. α-MnAs inclusions were identified extending into the GaAs buffer layer.

Item Type: Book Section
RIS ID: https://nottingham-repository.worktribe.com/output/1020378
Additional Information: The original publication is available at www.springerlink.com
Keywords: TEM, spintronics, GaMnN, MBE
Schools/Departments: University of Nottingham, UK > Faculty of Engineering > Department of Mechanical, Materials and Manufacturing Engineering
Depositing User: Brown, Prof Paul D
Date Deposited: 12 Aug 2011 16:10
Last Modified: 04 May 2020 20:30
URI: https://eprints.nottingham.ac.uk/id/eprint/1470

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